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  Datasheet File OCR Text:
 BDX63 BDX63A BDX63B BDX63C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications.
16.9
10.9
12.8
TO3 Package. Case connected to collector.
PNP complements are: BDX62, BDX62A, BDX62B, BDX62C.
ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated)
BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5
i i i
VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc.
Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tcase= 25C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V V V A A mA W C C
100 5
i i
120 5 8 12
i i i
140 5
i i i
150 90 200 -65 to 200 1.94
C / W
Prelim. 7/93
BDX63 BDX63A BDX63B BDX63C
ELECTRICAL CHARACTERISTICS (Tj = 25C,
Parameter
ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance Cut-off frequency Turn-off breakdown energy with inductive load
unless otherwise stated)
Test Conditions
IE = 0, VCB = VCEOmax IE = 0, VCB = 1/2VCBOmax, Tj = 200C IB = 0, VCE = 1/2VCEOmax IC = 0, VEB = 5V IC = 0.5A, VCE = 3V IC = 3A, VCE = 3V IC = 8A, VCE = 3V IC = 3A, VCE = 3V IC = 3A, IB = 12mA IE = Ie = 0, VCB = 10V IC = 3A, VCE = 3V -IBoff = 0, ICon = 4.5 A tp = 1ms, T = 100ms
Min.
Typ.
Max.
0.2 2 0.5 5
Unit.
mA mA mA
2500 1000 2600 2.5 2 100 100 50 2.5 100 1.2 V V V pF kHz mJ
hFE1/hFE2 D.C. current gain ratio of I = 3A, VCE = 3V complementary matched pairs C
ih
fei
Small signal current gain Diode, forward voltage
IC = 3A, VCE = 3V, f = 1MHz IF = 3A
VF
Note 1: Measured under pulse conditions , tp < 300ms, d < 2%
R1 typ. 8KW R2 typ. 100W
Circuit diagram.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/93


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