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BDX63 BDX63A BDX63B BDX63C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated) BDX BDX BDX BDX 63 63A 63B 63C 60 80 100 120 80 5 i i i VCEO VCBO VEBO IC ICM IB Ptot Tj Tstj Rth j-mb Semelab plc. Collector - emitter voltage (open base) Collector - base voltage (open emitter) Emitter - base voltage (open collector) Collector current Collector current (peak) Base current Total power dissipation at Tcase= 25C Maximum junction temperature Storage junction temperature Thermal resistance, junction to mounting base. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk V V V A A mA W C C 100 5 i i 120 5 8 12 i i i 140 5 i i i 150 90 200 -65 to 200 1.94 C / W Prelim. 7/93 BDX63 BDX63A BDX63B BDX63C ELECTRICAL CHARACTERISTICS (Tj = 25C, Parameter ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (note 1) Base - emitter voltage (note 1) Collector - emitter saturation voltage Collector capacitance Cut-off frequency Turn-off breakdown energy with inductive load unless otherwise stated) Test Conditions IE = 0, VCB = VCEOmax IE = 0, VCB = 1/2VCBOmax, Tj = 200C IB = 0, VCE = 1/2VCEOmax IC = 0, VEB = 5V IC = 0.5A, VCE = 3V IC = 3A, VCE = 3V IC = 8A, VCE = 3V IC = 3A, VCE = 3V IC = 3A, IB = 12mA IE = Ie = 0, VCB = 10V IC = 3A, VCE = 3V -IBoff = 0, ICon = 4.5 A tp = 1ms, T = 100ms Min. Typ. Max. 0.2 2 0.5 5 Unit. mA mA mA 2500 1000 2600 2.5 2 100 100 50 2.5 100 1.2 V V V pF kHz mJ hFE1/hFE2 D.C. current gain ratio of I = 3A, VCE = 3V complementary matched pairs C ih fei Small signal current gain Diode, forward voltage IC = 3A, VCE = 3V, f = 1MHz IF = 3A VF Note 1: Measured under pulse conditions , tp < 300ms, d < 2% R1 typ. 8KW R2 typ. 100W Circuit diagram. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/93 |
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